ISBN 9402414169 books & textbook
Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications (Topics in Applied Physics, 131)
Park, Byung-Eun Ishiwara, Hiroshi Okuyama, Masanori Sakai, Shigeki Yoon, Sung-Min
Springer /2018-06-15 Paperback / 365 Pages
isbn-10: 9402414169 / isbn-13: 9789402414165
